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Balancing the Lifetime and Storage Overhead on Error Correction for Phase Change Memory

As DRAM is facing the scaling difficulty in terms of energy cost and reliability, some nonvolatile storage materials were proposed to be the substitute or supplement of main memory. Phase Change Memory (PCM) is one of the most promising nonvolatile memory that could be put into use in the near futur...

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Detalhes bibliográficos
Publicado no:PLoS One
Main Authors: An, Ning, Wang, Rui, Gao, Yuan, Yang, Hailong, Qian, Depei
Formato: Artigo
Idioma:Inglês
Publicado em: Public Library of Science 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4497737/
https://ncbi.nlm.nih.gov/pubmed/26158524
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1371/journal.pone.0131964
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