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Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography
Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (small...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4486951/ https://ncbi.nlm.nih.gov/pubmed/26126936 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11463 |
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