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Schottky barrier formation and band bending revealed by first- principles calculations
The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4464327/ https://ncbi.nlm.nih.gov/pubmed/26065401 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11374 |
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