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Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors
Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensit...
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| Foilsithe in: | Nat Commun |
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| Main Authors: | , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Pub. Group
2015
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4458876/ https://ncbi.nlm.nih.gov/pubmed/26017853 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms8136 |
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