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Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
In this study, novel thin-GaN-based ultraviolet light-emitting diodes (NTG-LEDs) were fabricated using wafer bonding, laser lift-off, dry etching, textured surface, and interconnection techniques. Placing PN electrodes on the same side minimized the absorption caused by electrodes in conventional ve...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4404426/ https://ncbi.nlm.nih.gov/pubmed/25977655 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0885-4 |
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