Investigation of CuGaSe(2)/CuInSe(2) double heterojunction interfaces grown by molecular beam epitaxy

In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe(2)/CnInSe(2)/CuGaSe(2) grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscil...

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Detalhes bibliográficos
Publicado no:AIP Adv
Main Authors: Thiru, Sathiabama, Asakawa, Masaki, Honda, Kazuki, Kawaharazuka, Atsushi, Tackeuchi, Atsushi, Makimoto, Toshiki, Horikoshi, Yoshiji
Formato: Artigo
Idioma:Inglês
Publicado em: AIP Publishing LLC 2015
Assuntos:
Regular Articles
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4387601/
https://ncbi.nlm.nih.gov/pubmed/25874158
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4908229
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