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Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min(−1) or l...
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| הוצא לאור ב: | Nat Commun |
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| Main Authors: | , , , , , , , , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Pub. Group
2015
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4382696/ https://ncbi.nlm.nih.gov/pubmed/25757864 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms7499 |
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