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Heterovalent Substitution to Enrich Electrical Conductivity in Cu(2)CdSn(1-x)Ga(x)Se(4) Series for High Thermoelectric Performances
Serials of Ga doping on Sn sites as heterovalent substitution in Cu(2)CdSnSe(4) are prepared by the melting method and the spark plasma sintering (SPS) technique to form Cu(2)CdSn(1-x)Ga(x)Se(4) (x = 0, 0.025, 0.05, 0.075, 0.01, and 0.125). Massive atomic vacancies are found at x = 0.10 by the heter...
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| Pubblicato in: | Sci Rep |
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| Autori principali: | , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2015
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4366858/ https://ncbi.nlm.nih.gov/pubmed/25791823 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep09365 |
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