Yüklüyor......

Caution Is Required in Interpretation of Mutations in the Voltage Sensing Domain of Voltage Gated Channels as Evidence for Gating Mechanisms

The gating mechanism of voltage sensitive ion channels is generally considered to be the motion of the S4 transmembrane segment of the voltage sensing domains (VSD). The primary supporting evidence came from R→C mutations on the S4 transmembrane segment of the VSD, followed by reaction with a methan...

Ful tanımlama

Kaydedildi:
Detaylı Bibliyografya
Yayımlandı:Int J Mol Sci
Asıl Yazarlar: Kariev, Alisher M., Green, Michael E.
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MDPI 2015
Konular:
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4307324/
https://ncbi.nlm.nih.gov/pubmed/25588216
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ijms16011627
Etiketler: Etiketle
Etiket eklenmemiş, İlk siz ekleyin!