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Highly-ordered silicon inverted nanocone arrays with broadband light antireflectance
In this work, highly-ordered silicon inverted nanocone arrays are fabricated by integration of nanosphere lithography with reactive ion etching (RIE) method. The optical characteristics of as-prepared Si inverted nanocone arrays are investigated both by experiments and simulations. It is found that...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4303704/ https://ncbi.nlm.nih.gov/pubmed/25635178 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-014-0718-x |
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