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Neuromorphic crossbar circuit with nanoscale filamentary-switching binary memristors for speech recognition

In this paper, a neuromorphic crossbar circuit with binary memristors is proposed for speech recognition. The binary memristors which are based on filamentary-switching mechanism can be found more popularly and are easy to be fabricated than analog memristors that are rare in materials and need a mo...

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Bibliografiske detaljer
Udgivet i:Nanoscale Res Lett
Main Authors: Truong, Son Ngoc, Ham, Seok-Jin, Min, Kyeong-Sik
Format: Artigo
Sprog:Inglês
Udgivet: Springer 2014
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4256962/
https://ncbi.nlm.nih.gov/pubmed/25489283
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-629
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