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Strain-induced Large Exciton Energy Shifts in Buckled CdS Nanowires

Strain engineering can be utilized to tune the fundamental properties of semiconductor materials for applications in advanced electronic and photonic devices. Recently, the effects of large strain on the properties of nanostructures are being intensely investigated to further expand our insights int...

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Publicat a:Nano Lett
Autors principals: Sun, Liaoxin, Kim, Do Hyun, Oh, Kyu Hwan, Agarwal, Ritesh
Format: Artigo
Idioma:Inglês
Publicat: 2013
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4236022/
https://ncbi.nlm.nih.gov/pubmed/23899018
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl401860f
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