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Strain-induced Large Exciton Energy Shifts in Buckled CdS Nanowires
Strain engineering can be utilized to tune the fundamental properties of semiconductor materials for applications in advanced electronic and photonic devices. Recently, the effects of large strain on the properties of nanostructures are being intensely investigated to further expand our insights int...
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| Publicat a: | Nano Lett |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
2013
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4236022/ https://ncbi.nlm.nih.gov/pubmed/23899018 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl401860f |
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