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Architecture and applications of a high resolution gated SPAD image sensor

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 μm. The fill-factor of 5% can be...

Täydet tiedot

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Bibliografiset tiedot
Päätekijät: Burri, Samuel, Maruyama, Yuki, Michalet, Xavier, Regazzoni, Francesco, Bruschini, Claudio, Charbon, Edoardo
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Optical Society of America 2014
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC4162351/
https://ncbi.nlm.nih.gov/pubmed/25090572
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1364/OE.22.017573
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