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Architecture and applications of a high resolution gated SPAD image sensor
We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 μm. The fill-factor of 5% can be...
Tallennettuna:
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Optical Society of America
2014
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4162351/ https://ncbi.nlm.nih.gov/pubmed/25090572 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1364/OE.22.017573 |
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