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Thermoelectric Seebeck effect in oxide-based resistive switching memory
Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. Howe...
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| 主要な著者: | , , , , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Pub. Group
2014
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4143917/ https://ncbi.nlm.nih.gov/pubmed/25141267 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms5598 |
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