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Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors
Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Beilstein-Institut
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4142974/ https://ncbi.nlm.nih.gov/pubmed/25161832 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.5.110 |
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