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Unconventional Transport through Graphene on SrTiO(3): A Plausible Effect of SrTiO(3) Phase-Transitions
High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO(3) (STO) thin film substrate. At carrier densities away from...
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| Main Authors: | , , , , , , , , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2014
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4141260/ https://ncbi.nlm.nih.gov/pubmed/25146230 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06173 |
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