Structural Mechanism of Voltage-Dependent Gating in an Isolated Voltage-Sensing Domain

The transduction of transmembrane electric fields into protein motion plays an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSD) carry out these functions through reorientations of S4 helix with discrete gating charges. Here, crystal structures of th...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Li, Qufei, Wanderling, Sherry, Paduch, Marcin, Medovoy, David, Singharoy, Abhishek, McGreevy, Ryan, Villalba-Galea, Carlos, Hulse, Raymond E., Roux, Benoit, Schulten, Klaus, Kossiakoff, Anthony, Perozo, Eduardo
Formato: Artigo
Lenguaje:Inglês
Publicado: 2014
Materias:
Article
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC4116111/
https://ncbi.nlm.nih.gov/pubmed/24487958
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/nsmb.2768
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares