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Hysteresis modeling in ballistic carbon nanotube field-effect transistors
Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as...
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| Hlavní autoři: | , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Dove Medical Press
2014
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4099195/ https://ncbi.nlm.nih.gov/pubmed/25187698 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.2147/NSA.S58003 |
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