Heterojunction Hybrid Devices from Vapor Phase Grown MoS(2)

We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS(2)) layer transferred onto p-type silicon. The fabrication is scalable as the MoS(2) is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n hetero...

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Autors principals: Yim, Chanyoung, O'Brien, Maria, McEvoy, Niall, Riazimehr, Sarah, Schäfer-Eberwein, Heiko, Bablich, Andreas, Pawar, Ravinder, Iannaccone, Giuseppe, Downing, Clive, Fiori, Gianluca, Lemme, Max C., Duesberg, Georg S.
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2014
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4074969/
https://ncbi.nlm.nih.gov/pubmed/24975741
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05458
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