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Effect of Mechanical Loads on Stability of Nanodomains in Ferroelectric Ultrathin Films: Towards Flexible Erasing of the Non-Volatile Memories

Intensive investigations have been drawn on nanoscale ferroelectrics for their prospective applications such as developing memory devices. In contrast with the commonly used electrical means to process (i.e., read, write or erase) the information carried by ferroelectric domains, at present, mechani...

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Detalhes bibliográficos
Main Authors: Chen, W. J., Zheng, Yue, Xiong, W. M., Feng, Xue, Wang, Biao, Wang, Ying
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2014
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4061556/
https://ncbi.nlm.nih.gov/pubmed/24938187
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05339
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