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Novel synaptic memory device for neuromorphic computing
This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO(2) material. The mechanism behind re...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4061545/ https://ncbi.nlm.nih.gov/pubmed/24939247 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05333 |
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