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Metallic resist for phase-change lithography
Currently, the most widely used photoresists in optical lithography are organic-based resists. The major limitations of such resists include the photon accumulation severely affects the quality of photolithography patterns and the size of the pattern is constrained by the diffraction limit. Phase-ch...
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| Main Authors: | , , , , , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Publishing Group
2014
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4058869/ https://ncbi.nlm.nih.gov/pubmed/24931505 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05300 |
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