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Electrically and Optically Readable Light Emitting Memories

Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory perfor...

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Bibliografiske detaljer
Main Authors: Chang, Che-Wei, Tan, Wei-Chun, Lu, Meng-Lin, Pan, Tai-Chun, Yang, Ying-Jay, Chen, Yang-Fang
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2014
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4044638/
https://ncbi.nlm.nih.gov/pubmed/24894723
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05121
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