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Electrically and Optically Readable Light Emitting Memories
Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory perfor...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4044638/ https://ncbi.nlm.nih.gov/pubmed/24894723 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05121 |
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