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Fabrication of porous silicon nanowires by MACE method in HF/H(2)O(2)/AgNO(3) system at room temperature
In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the ‘one-pot procedure’ metal-assisted chemical etching (MACE) method in the HF/H(2)O(2)/AgNO(3) system at room temperature. The effects of H(2)O(2) concentration on the nanostructure of silicon nano...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4029987/ https://ncbi.nlm.nih.gov/pubmed/24910568 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-196 |
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