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Role of microstructures on the M1-M2 phase transition in epitaxial VO(2) thin films
Vanadium dioxide (VO(2)) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films...
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| Autors principals: | , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4010922/ https://ncbi.nlm.nih.gov/pubmed/24798056 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep04854 |
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