Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching

ABSTRACT: Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 10(11) cm(−2)) arrays of NWs with a high and controllable aspect ratio. In particu...

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Autors principals: Irrera, Alessia, Artoni, Pietro, Fioravanti, Valeria, Franzò, Giorgia, Fazio, Barbara, Musumeci, Paolo, Boninelli, Simona, Impellizzeri, Giuliana, Terrasi, Antonio, Priolo, Francesco, Iacona, Fabio
Format: Artigo
Idioma:Inglês
Publicat: Springer 2014
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3928609/
https://ncbi.nlm.nih.gov/pubmed/24521284
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-74
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