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Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity

Substitutional hydrogen at oxygen site (H(O)) is well-known to be a robust source of n-type conductivity in ZnO, but a puzzling aspect is that the doping limit by hydrogen is only about 10(18) cm(−3), even if solubility limit is much higher. Another puzzling aspect of ZnO is persistent photoconducti...

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Detalhes bibliográficos
Main Authors: Nahm, Ho-Hyun, Park, C. H., Kim, Yong-Sung
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2014
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3927214/
https://ncbi.nlm.nih.gov/pubmed/24535157
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep04124
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