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Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decr...

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Bibliografski detalji
Glavni autori: Yamada, Shigeru, Kurokawa, Yasuyoshi, Miyajima, Shinsuke, Konagai, Makoto
Format: Artigo
Jezik:Inglês
Izdano: Springer 2014
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3926976/
https://ncbi.nlm.nih.gov/pubmed/24521208
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-72
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