Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier

The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanosc...

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Autors principals: Li, Qiang, Shen, Ting-Ting, Cao, Yan-Ling, Zhang, Kun, Yan, Shi-Shen, Tian, Yu-Feng, Kang, Shi-Shou, Zhao, Ming-Wen, Dai, You-Yong, Chen, Yan-Xue, Liu, Guo-Lei, Mei, Liang-Mo, Wang, Xiao-Lin, Grünberg, Peter
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2014
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3899592/
https://ncbi.nlm.nih.gov/pubmed/24452305
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep03835
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