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Gold-Free Ternary III–V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer
[Image: see text] With the continued maturation of III–V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-contr...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
American Chemical Society
2013
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| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3890218/ https://ncbi.nlm.nih.gov/pubmed/24329502 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl404085a |
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