Wird geladen...

Gold-Free Ternary III–V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

[Image: see text] With the continued maturation of III–V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-contr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Conesa-Boj, Sònia, Kriegner, Dominik, Han, Xiang-Lei, Plissard, Sébastien, Wallart, Xavier, Stangl, Julian, Fontcuberta i Morral, Anna, Caroff, Philippe
Format: Artigo
Sprache:Inglês
Veröffentlicht: American Chemical Society 2013
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3890218/
https://ncbi.nlm.nih.gov/pubmed/24329502
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl404085a
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!