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Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition
The controlled growth of large-area, high-quality, single-crystal graphene is highly desired for applications in electronics and optoelectronics; however, the production of this material remains challenging because the atomistic mechanism that governs graphene growth is not well understood. The edge...
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| Autores principales: | , , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
National Academy of Sciences
2013
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3870701/ https://ncbi.nlm.nih.gov/pubmed/24297886 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1312802110 |
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