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Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps
Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [10 [Formula: see text] 0] to infrequent [02 [Formula: see text] 3] and the surface becomes rough. No surface-related exciton emission is obs...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3842743/ https://ncbi.nlm.nih.gov/pubmed/24256997 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-493 |
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