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Individual Zn(2)SnO(4)-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states
Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn(2)SnO(4)-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol–gel approach followed by post-annealing. The bac...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2013
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3832853/ https://ncbi.nlm.nih.gov/pubmed/24247976 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep03249 |
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