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NO and NO(2) Sensing Properties of WO(3) and Co(3)O(4) Based Gas Sensors
Semiconductor-based gas sensors that use n-type WO(3) or p-type Co(3)O(4) powder were fabricated and their gas sensing properties toward NO(2) or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO(3)-based sensor increased on exposure to NO(2) and NO. On the other...
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| Hauptverfasser: | , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2013
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3821332/ https://ncbi.nlm.nih.gov/pubmed/24048338 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s130912467 |
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