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NO and NO(2) Sensing Properties of WO(3) and Co(3)O(4) Based Gas Sensors

Semiconductor-based gas sensors that use n-type WO(3) or p-type Co(3)O(4) powder were fabricated and their gas sensing properties toward NO(2) or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO(3)-based sensor increased on exposure to NO(2) and NO. On the other...

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Détails bibliographiques
Auteurs principaux: Akamatsu, Takafumi, Itoh, Toshio, Izu, Noriya, Shin, Woosuck
Format: Artigo
Langue:Inglês
Publié: MDPI 2013
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC3821332/
https://ncbi.nlm.nih.gov/pubmed/24048338
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s130912467
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