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Reversible insulator-metal transition of LaAlO(3)/SrTiO(3) interface for nonvolatile memory
We report a new type of memory device based on insulating LaAlO(3)/SrTiO(3) (LAO/STO) hetero-interface. The microstructures of the LAO/STO interface are characterized by Cs-corrected scanning transmission electron microscopy, which reveals the element intermixing at the interface. The inhomogeneous...
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| Main Authors: | , , , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2013
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3792417/ https://ncbi.nlm.nih.gov/pubmed/24100438 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02870 |
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