טוען...
Solar-Blind Photodetectors for Harsh Electronics
We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radia...
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| Main Authors: | , , , , , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2013
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3769657/ https://ncbi.nlm.nih.gov/pubmed/24022208 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02628 |
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