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Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition
To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al(2)O(3)) film for passivation on the whole surface...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3765971/ https://ncbi.nlm.nih.gov/pubmed/23968156 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-361 |
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