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Hyperuniformity in amorphous silicon based on the measurement of the infinite-wavelength limit of the structure factor
We report the results of highly sensitive transmission X-ray scattering measurements performed at the Advanced Photon Source, Argonne National Laboratory, on nearly fully dense high-purity amorphous-silicon (a-Si) samples for the purpose of determining their degree of hyperuniformity. A perfectly hy...
में बचाया:
| मुख्य लेखकों: | , , , , , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
National Academy of Sciences
2013
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3746861/ https://ncbi.nlm.nih.gov/pubmed/23898166 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1220106110 |
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