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Non-volatile memory based on the ferroelectric photovoltaic effect

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low op...

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Detalhes bibliográficos
Main Authors: Guo, Rui, You, Lu, Zhou, Yang, Shiuh Lim, Zhi, Zou, Xi, Chen, Lang, Ramesh, R., Wang, Junling
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Pub. Group 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3709492/
https://ncbi.nlm.nih.gov/pubmed/23756366
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms2990
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