Strongly Enhanced THz Emission caused by Localized Surface Charges in Semiconducting Germanium Nanowires

A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have foc...

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Detaylı Bibliyografya
Asıl Yazarlar: Lee, Woo-Jung, Ma, Jin Won, Bae, Jung Min, Jeong, Kwang-Sik, Cho, Mann-Ho, Kang, Chul, Wi, Jung-Sub
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Nature Publishing Group 2013
Konular:
Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC3680808/
https://ncbi.nlm.nih.gov/pubmed/23760467
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01984
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