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Density of States and Its Local Fluctuations Determined by Capacitance of Strongly Disordered Graphene
We demonstrate that fluctuations of the local density of states (LDOS) in strongly disordered graphene play an important role in determining the quantum capacitance of the top-gate graphene devices. Depending on the strength of the disorder induced by metal-cluster decoration, the measured quantum c...
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| Main Authors: | , , , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group
2013
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3642665/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01772 |
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