טוען...
Influence of diffusion on space-charge-limited current measurements in organic semiconductors
Numerical simulations of current–voltage curves in electron-only devices are used to discuss the influence of charged defects on the information derived from fitting space-charge-limited current models to the data. Charged, acceptor-like defects lead to barriers impeding the flow of electrons in ele...
שמור ב:
| מחבר ראשי: | |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Beilstein-Institut
2013
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3628774/ https://ncbi.nlm.nih.gov/pubmed/23616937 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.4.18 |
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