Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambi...

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Main Authors: Fontana, Marcio, Deppe, Tristan, Boyd, Anthony K., Rinzan, Mohamed, Liu, Amy Y., Paranjape, Makarand, Barbara, Paola
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2013
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Article
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC3620663/
https://ncbi.nlm.nih.gov/pubmed/23567328
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01634
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