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Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions
Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambi...
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| Hlavní autoři: | , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2013
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3620663/ https://ncbi.nlm.nih.gov/pubmed/23567328 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01634 |
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