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Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambi...

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Detalhes bibliográficos
Main Authors: Fontana, Marcio, Deppe, Tristan, Boyd, Anthony K., Rinzan, Mohamed, Liu, Amy Y., Paranjape, Makarand, Barbara, Paola
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3620663/
https://ncbi.nlm.nih.gov/pubmed/23567328
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01634
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