Wang, Z., Dou, Y., Goodchild, S. J., Es-Salah-Lamoureux, Z., & Fedida, D. (2013). Components of gating charge movement and S4 voltage-sensor exposure during activation of hERG channels. The Rockefeller University Press.
Citação norma ChicagoWang, Zhuren, Ying Dou, Samuel J. Goodchild, Zeineb Es-Salah-Lamoureux, and David Fedida. Components of Gating Charge Movement and S4 Voltage-sensor Exposure During Activation of HERG Channels. The Rockefeller University Press, 2013.
MLA CitationWang, Zhuren, et al. Components of Gating Charge Movement and S4 Voltage-sensor Exposure During Activation of HERG Channels. The Rockefeller University Press, 2013.
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