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Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid–solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as t...

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Detalhes bibliográficos
Main Authors: Gabrielyan, Nare, Saranti, Konstantina, Manjunatha, Krishna Nama, Paul, Shashi
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3586344/
https://ncbi.nlm.nih.gov/pubmed/23413969
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-83
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