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Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures
The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases wh...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3479062/ https://ncbi.nlm.nih.gov/pubmed/23021540 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-539 |
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