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High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure
A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (T(Fin)/W(F...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3466142/ https://ncbi.nlm.nih.gov/pubmed/22853458 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-431 |
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