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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron mic...

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Hlavní autoři: Kumar, Mahesh, Bhat, Thirumaleshwara N, Rajpalke, Mohana K, Roul, Basanta, Kalghatgi, Ajit T, Krupanidhi, S B
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2011
Témata:
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3256238/
https://ncbi.nlm.nih.gov/pubmed/22122843
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-609
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