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Direct-bandgap light-emitting germanium in tensilely strained nanomembranes

Silicon, germanium, and related alloys, which provide the leading materials platform of electronics, are extremely inefficient light emitters because of the indirect nature of their fundamental energy bandgap. This basic materials property has so far hindered the development of group-IV photonic act...

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Detalhes bibliográficos
Main Authors: Sánchez-Pérez, Jose R., Boztug, Cicek, Chen, Feng, Sudradjat, Faisal F., Paskiewicz, Deborah M., Jacobson, RB, Lagally, Max G., Paiella, Roberto
Formato: Artigo
Idioma:Inglês
Publicado em: National Academy of Sciences 2011
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3223450/
https://ncbi.nlm.nih.gov/pubmed/22084063
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1107968108
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