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Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
Silicon, germanium, and related alloys, which provide the leading materials platform of electronics, are extremely inefficient light emitters because of the indirect nature of their fundamental energy bandgap. This basic materials property has so far hindered the development of group-IV photonic act...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3223450/ https://ncbi.nlm.nih.gov/pubmed/22084063 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1107968108 |
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